What is the difference between Program counter and Flash memory in AVR? Where are the memory of instruction set is present in Program counter or in Flash memory? How instructions set linked with program counter instructions?
Modern Flash memory is made up of "continuous floating gate non volatile memory device or "nanocrystals based non volatile memory devices? What is "status of the nanocrystals based non volatile memory device for flash memory "applications?
The configuration of floating gate MOSFET is symmetric. I want to know what could happen if I switched the the grounded terminal meanwhile keep the terminal which is grounded as source in a packaged flash memory?
What do we exactly mean by feature dissimilarity measure? How such a measure can perform better than similarity measure in problems like clustering and classification. What are the popular dissimilarity measures available till date?
Generally we deal with two types of forecasting; point and interval. With statistical method of forecasting (like ARIMA), we can perform interval prediction considering uncertainty of prediction. But what about doing the same with machine learning techniques like ANN and SVM?
I heard that the SVM classifier for binary classification needs a small number of positive examples compared to other classifiers. What is the reason behind this? And is there any other benefit of using SVM as classifier?
Why Major channel models such as WINNIER II, ITU, etc. depend on log-distance equation to model the signal pathloss (the average attenuation of the signal), according to the equation: PL(Distance) = PL_reference + 10 x alpha x Log(Distance). Is it the best way to represent the relation between the Pathloss and distance?
How can we separate eddy current effect and the magnetic after-effect in carbon steel, only measure the relaxation time caused by eddy current effect or only measure the time caused by magnetic domain movement?